• Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi 

      Araújo, C. Moysés; Almeida, J. Souza de; Pepe, I.; Silva, Antonio Ferreira da; Sernelius, Bo E.; Souza, Joel Pereira de; Boudinov, Henri Ivanov (2000) [Artigo de periódico]
      The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried ...