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Diffusion reaction of oxigen in aluminum oxide films on silicon

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Diffusion reaction of oxigen in aluminum oxide films on silicon

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Título Diffusion reaction of oxigen in aluminum oxide films on silicon
Autor Rosa, Elisa Brod Oliveira da
Baumvol, Israel Jacob Rabin
Morais, Jonder
Almeida, Rita Maria Cunha de
Papaleo, Ricardo Meurer
Stedile, Fernanda Chiarello
Abstract Aluminum oxide films deposited on silicon by atomic layer chemical vapor deposition were annealed in an ¹⁸O-enriched oxygen atmosphere under various conditions of temperature, time, and pressure. Cavity formation at the film surface was monitored by atomic force microscopy and it was seen to depend on annealing parameters. Areal densities and profiles of oxygen incorporated from the gas phase were determined by nuclear reaction techniques. A propagating front of incorporated oxygen from the gas/solid interface toward the film/ substrate interface was observed. This was modeled as a diffusion-reaction process, where isotopic exchange is the reaction channel. The model is capable of reproducing the observed ¹⁸O profiles and areal densities as well as their dependence on annealing parameters.
Contido em Physical review. B, Condensed matter and materials physics. Melville. Vol. 65, no. 12 (Mar. 2002), 121303, 4 p.
Assunto Alumina
Análise química nuclear
Filmes finos
Interdifusao quimica
Microscopia de força atômica
Oxigenio
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/103933
Arquivos Descrição Formato
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