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dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorBehar, Monipt_BR
dc.contributor.authorIglesias, Jose Robertopt_BR
dc.contributor.authorLivi, Rogerio Pohlmannpt_BR
dc.contributor.authorZawislak, Fernando Claudiopt_BR
dc.date.accessioned2014-10-04T02:13:20Zpt_BR
dc.date.issued1978pt_BR
dc.identifier.issn0163-1829pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/104160pt_BR
dc.description.abstractThe electric quadrupole interactions produced by near-neighbor (nn) and distant-neighbor impurity atoms of Cu, Au, Zn, In, Ga, Al, Sn, and Sb in a cubic Ag lattice are measured as a function of the temperature by the time differential perturbed angular correlation method. The results show that both the high-frequency interaction vhQ-generated by nn impurities-and the low-frequency interaction v1Q- generated by distant impurities-follow the relation vQ(T) = vQ(O) (I -a T 312). From the present measurements it can be concluded that both coefficients, ∝h and ∝1 are strongly dependent on the mass M of the impurity. For the case of Al, Ga, and In impurities with the same charge difference ∆Z = 2 between host and impurity, both ∝h and ∝1 scale as M-n with n = 0.37 ±0.04 and n = 0.9 ±0.4, respectively. lt is shown that for a Sn impurity the unnormalized slope ∝h ·vhQ(O) is independent of the concentration in the range 1.5-3 at. %. A strong dependence of ∝h and ∝1 on ∆Z, the charge difference between host and impurity, is also observed; however, the results do not follow a simple relation.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter. New York. Vol. 18, n. 12 (Dec. 1978), p. 6713-6718pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectEspectros raios gamapt_BR
dc.subjectImpurezaspt_BR
dc.titleTemperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metalpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000145363pt_BR
dc.type.originEstrangeiropt_BR


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