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Kinectics of ion-induced transformations in β-NiAl thin films as characterized by in situ electrical resistivity measurements

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Kinectics of ion-induced transformations in β-NiAl thin films as characterized by in situ electrical resistivity measurements

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Título Kinectics of ion-induced transformations in β-NiAl thin films as characterized by in situ electrical resistivity measurements
Autor Miranda, Rosalvo Mario Nunes
Vasconcellos, Marcos Antonio Zen
Baibich, Mario Norberto
Costa, Jose Antonio Trindade Borges da
Abstract In situ electrical resistivity of thin film B-NiAl at 77 K under 120 keV Ar1 irradiation has been measured as a function of the total dose for film thickness of 25, 37.5, 50, 62.5, and 75 nm. A qualitative change was observed in the resistivity versus dose behavior for 50 nm films that cannot be explained by the standard kinetic models. It is shown that depth-dependent cross sections account for the phenomenon as well as for the variety of dose-dependent electrical behaviors reported in the literature.
Contido em Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 58, no. 9 (Sept. 1998), p. 5250-5757
Assunto Filmes finos
Medidas de resistividade eletrica
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/104219
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