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dc.contributor.authorAbramof, Eduardo G.pt_BR
dc.contributor.authorSilva, Antonio Ferreira dapt_BR
dc.contributor.authorSernelius, Bo E.pt_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.date.accessioned2014-10-07T02:11:24Zpt_BR
dc.date.issued1997pt_BR
dc.identifier.issn0163-1829pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/104223pt_BR
dc.description.abstractThe Hall effect and resistivity of Si:Bi with donor concentration varying from 3.0X1017 to 1.4X1020 cm-3 were measured from room temperature down to 13 K. The samples were prepared by Bi1 implantation in Van der Pauw structures delineated in Si chips. The measured resistivities were compared with the ones calculated by a generalized Drude approach at similar temperatures and doping concentration, presenting fairly good agreement. The critical impurity concentration Nc of the metal-nonmetal transition was measured to be around 2X1019 cm-3. The critical concentration Nc was calculated by comparing the ionization energy of the insulating phase with the total energy of the metallic phase. This value of Nc agreed very well with the one obtained experimentally and the values estimated from other theoretical approaches.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter. New York. Vol. 55, no. 15 (Apr. 1997), p. 9584-9589pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectSilíciopt_BR
dc.subjectSemicondutorespt_BR
dc.titleTransport properties of silicon implanted with bismuthpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000192456pt_BR
dc.type.originEstrangeiropt_BR


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