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dc.contributor.authorSantos, Jose Henrique Rodrigues dospt_BR
dc.contributor.authorGrande, Pedro Luispt_BR
dc.contributor.authorBehar, Monipt_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorSchiwietz, Gregorpt_BR
dc.date.accessioned2014-10-07T02:11:24Zpt_BR
dc.date.issued1997pt_BR
dc.identifier.issn0163-1829pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/104224pt_BR
dc.description.abstractWe present measurements of the stopping power of 800-keV 4He ions channeled along the Si(100) axis, as a function of the incidence angle. We compare the experimental results with theoretical calculations by using the impact-parameter-dependent energy loss obtained from the solution of the time-dependent Schro¨dinger equation through the coupled-channel method. This nonperturbative calculation provides reliable energy-loss results which are in good agreement with the experimental results.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter. New York. Vol. 55, no. 7 (Feb. 1997), p. 4332-4342pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectHéliopt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.titleAngular dependence of the electronic energy loss of 800-keV He ions along the Si<100> directionpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000192473pt_BR
dc.type.originEstrangeiropt_BR


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