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Impurity resistivity of the double-donor system Si:P,Bi

dc.contributor.authorSilva, Antonio Ferreira dapt_BR
dc.contributor.authorSernelius, Bo E.pt_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorZheng, Hairongpt_BR
dc.contributor.authorSarachik, M.P.pt_BR
dc.date.accessioned2014-10-08T02:11:03Zpt_BR
dc.date.issued1999pt_BR
dc.identifier.issn1098-0121pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/104254pt_BR
dc.description.abstractThe electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter and materials physics. Melville. Vol. 60, no. 23 (Dec. 1999), p. 15824-15828pt_BR
dc.rightsOpen Accessen
dc.subjectImpurezaspt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectTemperaturapt_BR
dc.subjectCondutividade elétricapt_BR
dc.subjectDopagem de semicondutorespt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectSemicondutorespt_BR
dc.subjectTransição metal isolantept_BR
dc.subjectBoropt_BR
dc.subjectFósforopt_BR
dc.subjectSilíciopt_BR
dc.titleImpurity resistivity of the double-donor system Si:P,Bipt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000269719pt_BR
dc.type.originEstrangeiropt_BR


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