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dc.contributor.authorMuñoz-Marques, M. A.pt_BR
dc.contributor.authorParkinson, Garethpt_BR
dc.contributor.authorWoodruff, D. P.pt_BR
dc.contributor.authorSilva Junior, Agenor Hentz dapt_BR
dc.contributor.authorGrande, Pedro Luispt_BR
dc.contributor.authorSchwietz, Gregorpt_BR
dc.contributor.authorWood, Tim J.pt_BR
dc.contributor.authorBonet, Chrispt_BR
dc.contributor.authorTear, Steve P.pt_BR
dc.contributor.authorBailey, Paulpt_BR
dc.contributor.authorNoakes, Tim C. Q.pt_BR
dc.date.accessioned2014-10-09T02:13:09Zpt_BR
dc.date.issued2005pt_BR
dc.identifier.issn1098-0121pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/104304pt_BR
dc.description.abstractThe energy-loss spectrum associated with scattering of 100 keV H+ ions from Y atoms on Si (111) has been investigated both experimentally and theoretically. Measurements were made from Y overlayers, and from the Si (111) (1X1) two-dimensional silicide phase formed by Y on this surface, in various scattering geometries and with different surface preparations. Theoretical simulations were conducted based on calculations of the energy loss experienced in specific ion trajectories through the surface, using coupled-channel calculations to describe inner-shell ionization and excitation as a function of impact parameter. The experimental results indicate that additional broadening contributions arise from surface inhomogeneity and roughness, but for near-normal incident and outgoing trajectories the theory and experiment agree quite well. The calculations show that, even for the ideal two-dimensional silicide phase in which the Y atoms lie just below the surface, significant energy loss arises from interaction of the ions with surrounding Si atoms, leading to a complete loss of intensity at zero energy loss.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter and materials physics. Woodbury. Vol. 72, no. 7 (Aug. 2005), 075415 10p.pt_BR
dc.rightsOpen Accessen
dc.subjectSemicondutores elementarespt_BR
dc.subjectPerda de energia de particulaspt_BR
dc.subjectImpacto ion-superfíciept_BR
dc.subjectSilicio 111pt_BR
dc.subjectItriopt_BR
dc.subjectRetroespalhamentopt_BR
dc.titleEnergy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000532908pt_BR
dc.type.originEstrangeiropt_BR


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