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Large resistivity change and phase transition in the antiferromagnetic semiconductors LiMnAs and LaOMnAs

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Large resistivity change and phase transition in the antiferromagnetic semiconductors LiMnAs and LaOMnAs

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Título Large resistivity change and phase transition in the antiferromagnetic semiconductors LiMnAs and LaOMnAs
Autor Beleanu, Andreea
Kiss, Janos
Kreiner, Guido
Köhler, Christian
Müchler, Lukas
Schnelle, Walter
Burkhardt, Ulrich
Chadov, Stanislav
Medvediev, Sergiy
Ebke, Daniel
Felser, Claudia
Cordier, Gerhard
Albert, Barbara
Hoser, Andreas
Bernardi, Fabiano
Larkin, Timofei I.
Pröpper, Daniel
Boris, Alexander V.
Keimer, Bernhard
Abstract Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs, and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. Neutron and x-ray diffraction measurements on LiMnAs show a magnetic phase transition corresponding to the N´eel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory calculations.
Contido em Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 88, no. 18 (Nov. 2013), 184429, 12 p.
Assunto Difracao de neutrons
Materiais magneticos
Semicondutores
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/104568
Arquivos Descrição Formato
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