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dc.contributor.authorRibeiro, Evaldopt_BR
dc.contributor.authorBernussi, Ayrton Andrept_BR
dc.contributor.authorMaltez, Rogério Luispt_BR
dc.contributor.authorCarvalho Junior, Wilsonpt_BR
dc.contributor.authorGobbi, Angelo Luizpt_BR
dc.date.accessioned2015-01-21T02:17:23Zpt_BR
dc.date.issued2006pt_BR
dc.identifier.issn1098-0121pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/109093pt_BR
dc.description.abstractOptical and micro-structural properties of ordered/disordered/ordered InGaAsP quantum wells grown on GaAs substrates were investigated by photoluminescence spectroscopy, high-resolution transmission electron microscopy and selective area diffraction. Strong evidence of carrier localization effects was obtained from low temperature photoluminescence experiments. Photoluminescence spectra of thinner quantum wells were dominated by a broad emission band located at energies below the bandgap of the well material. The energy peak position of this emission varied considerably with the laser excitation power. Carrier localization was attributed to potential fluctuations in the barrier and well layers, as a result of two coexisting effects: Spontaneously atomic ordering and, in a minor degree, alloy inhomogeneities.We show that a reduction of the ordering degree in the bottom barrier layer resulted in a considerable decrease of localization effects in quaternary quantum well heterostructures.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter and materials physics. Melville. Vol. 73, no. 7 (Feb. 2006), 075330 7p.pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectArseneto de galiopt_BR
dc.subjectSemicondutores iii-vpt_BR
dc.subjectCompostos de indiopt_BR
dc.subjectIntervalo proibido de energiapt_BR
dc.subjectFotoluminescênciapt_BR
dc.subjectMicroscopia eletrônicapt_BR
dc.titleBarrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substratespt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000595065pt_BR
dc.type.originEstrangeiropt_BR


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