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On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

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On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

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Título On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies
Autor Reboh, Shay
Silva, Fernando Schaurich
Declemy, Alain
Barbot, Jean François
Beaufort, Marie France
Cherkashin, Nikolay
Fichtner, Paulo Fernando Papaleo
Abstract We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and implanted ion depth profiles. The measured strain is examined in the framework of solid mechanics and its physical origin is discussed. The microstructure evolution of the samples subjected to intermediate temperature annealing 350 °C is elucidated through transmission electron microscopy. Gas-filled cavities in the form of nanocracks and spherical bubbles appear at different relative concentration, size, and depth location, depending on the total fluence. These different microstructure evolutions are connected with the surface exfoliation behavior of samples annealed at high temperature 700 °C , determining the optimal conditions for thick layer transfer. 1.5 m thick Si films are then obtained onto glass substrates.
Contido em Journal of applied physics. Melville, NY. Vol. 108, no. 2 (July 2010), p. 023502-1 a 023502-6
Assunto Microestrutura
Silicones
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/117991
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