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dc.contributor.authorReboh, Shaypt_BR
dc.contributor.authorBarbot, Jean Françoispt_BR
dc.contributor.authorBeaufort, Marie Francept_BR
dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.date.accessioned2015-06-19T02:00:40Zpt_BR
dc.date.issued2010pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/117992pt_BR
dc.description.abstractH and He ion implantations allow the formation of nanocracks within controlled subsurface depths in semiconducting materials. Upon annealing, crack propagation and coalescence provides a way of cutting monocrystalline thin films. Here, the mechanisms of coalescence by crack-tip interactions are depicted in 001 Si wafers. Starting from overpressurized He-cracks, subcritical propagation was activated by diffusional H. Nanocrack interaction can occur by elastic forces, causing tip folding, or by plastic deformation forming extended defects. These observations are discussed and modeled using elasticity and fracture mechanics. The model suggests that kinetic effects in the cutting process depend on the crack interplanar separations.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville, NY. Vol. 96, no. 3 (Jan. 2010), p. 031907-1 a 031907-3pt_BR
dc.rightsOpen Accessen
dc.subjectMecânica da fraturapt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectFilmes finospt_BR
dc.titleH-induced subcritical crack propagation and interaction phenomena in (001) Si using He-cracks templatespt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000967952pt_BR
dc.type.originEstrangeiropt_BR


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