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dc.contributor.authorReboh, Shaypt_BR
dc.contributor.authorBeaufort, Marie Francept_BR
dc.contributor.authorBarbot, Jean Françoispt_BR
dc.contributor.authorGrilhé, Jeanpt_BR
dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.date.accessioned2015-06-19T02:00:40Zpt_BR
dc.date.issued2008pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/117996pt_BR
dc.description.abstractHydrogen is implanted into 001 silicon under the strain field of previously formed overpressurized helium plates. Upon thermal annealing, the hydrogen atoms precipitate into platelet structures oriented within specific 111 or 001 variant determined through the local symmetry of the strain. The behavior is understood in terms of elastic interactions and is described via energy minimization calculations, predicting the formation and distribution of each platelet orientation variant. Our results demonstrate the concept that sublocal organized arrangements of precipitates can be obtained within nanosize domains using local strain fields.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville, NY. Vol. 93, no. 2 (July 2008), p. 022106-1 a 022106-3pt_BR
dc.rightsOpen Accessen
dc.subjectImplantação de íonspt_BR
dc.subjectTratamento térmicopt_BR
dc.subjectMicroscopia eletrônica de transmissãopt_BR
dc.titleOrientation of H platelets under local stress in Sipt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000967978pt_BR
dc.type.originEstrangeiropt_BR


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