|Título||Passivation of n and p dopants in ion-implanted gaas by a 2D+ plasma
Sadana, Devendra K.
Souza, Joel Pereira de
|Abstract||Strong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a *D plasma under identical conditions. Even though a discrete band of dislocation loops was present in both the samples, the *D distribution in the two cases was remarkably different. In the Si-implanted sample the *D followed the carrier distribution, whereas in the Mg-implanted sample it followed the distribution of dislocation loops. Phenomenological mechanisms of *D interaction with dopants/dislocations in GaAs are postulated.
|Contido em||Applied physics letters. New York. Vol. 58, n. 4 (Jan. 1991), p. 385-387
Implantacao de ions
|Tipo||Artigo de periódico
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