Ion beam synthesis of cubic FeSi2

dc.contributor.author	Desimoni, Judith	pt_BR
dc.contributor.author	Bernas, H.	pt_BR
dc.contributor.author	Behar, Moni	pt_BR
dc.contributor.author	Lin, X.W.	pt_BR
dc.contributor.author	Washburn, J.	pt_BR
dc.contributor.author	Liliental-Weber, Zuzanna	pt_BR
dc.date.accessioned	2016-05-10T02:06:59Z	pt_BR
dc.date.issued	1993	pt_BR
dc.identifier.issn	0003-6951	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/140585	pt_BR
dc.description.abstract	Cubic FeSi, precipitates were synthesized in Si ( 100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 “C!. High resolution electron microscopy and Rutherford backscattering/channeling techniques show that the cubic precipitates occur in both aligned (A) and twinned (B) types with a lattice parameter very similar to that of the Si (100) matrix.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Applied physics letters. New York. Vol. 62, no. 3 (Jan. 1993), p. 306-308	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Implantação de íons	pt_BR
dc.title	Ion beam synthesis of cubic FeSi2	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000056178	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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