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Nitrogen transport during rapid thermal growth of silicon oxynitride films in N/sub 2/ O

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Nitrogen transport during rapid thermal growth of silicon oxynitride films in N/sub 2/ O

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Título Nitrogen transport during rapid thermal growth of silicon oxynitride films in N/sub 2/ O
Autor Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
Ganem, Jean-Jacques
Trimaille, Isabelle
Rigo, Serge
Abstract We investigated the transport of nitrogenous species during rapid thermal growth of silicon oxynitride films on Si in N2O, using N isotopic tracing and high resolution depth profiling techniques. The results indicate that the diffusion of nitrogenous species ~most probably NO! through the growing oxynitride film to react with Si at the oxynitride/Si interface, induces the incorporation of N near this interface. This mechanism acts in parallel with a site-to-site jump mechanism ~interstitialcy or vacancy! of diffusion and chemical reaction of nitrogenous species in the volume of the growing oxynitride film. The characteristic N accumulation only near the interface obtained by rapid thermal processing growth in N2O is due to the removal of N from the near surface region of the films, here attributed to atomic exchanges O-N taking place during growth. Furthermore, N-N exchange was also observed.
Contido em Applied physics letters. New York. Vol. 69, n. 16 (Oct. 1996), p. 2385-2387
Assunto Filmes finos
Filmes finos : Crescimento : Tratamento térmico
Fisica da materia condensada
Implantação de íons : Nitrogênio
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/140707
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