Repositório Digital

A- A A+

Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation

.

Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation

Mostrar registro completo

Estatísticas

Título Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation
Autor Baumvol, Israel Jacob Rabin
Krug, Cristiano
Stedile, Fernanda Chiarello
Green, Martin L.
Jacobson, D.C.
Eaglesham, D.
Bernstein, J.D.
Shao, J.
Denholm, A.S.
Kellerman, P.L.
Abstract A method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal–oxide–semiconductor field effect transistor device structures, namely plasma immersion N implantation into SiO2 films. Plasma immersion implantation pulse voltages in the range 200–1000 V, and fluences from 1016 to 1017Ncm22 were implanted into thermally grown SiO2 films, with thicknesses between 3 and 6 nm. The areal densities of N and O in the resulting oxynitride films were determined by nuclear reaction analysis, before and after annealing in high-vacuum. N, O, and Si profiles in the films were determined with subnanometric depth resolution by medium energy ion scattering. The results indicate that plasma immersion ion implantation allows for shallow and controlled deposition of significant amounts of nitrogen ~up to 3.8 nm of equivalent Si3N4 thickness!. Implantation is accompanied by moderate damage at the oxynitride/Si interface which can be recovered by thermal annealing.
Contido em Applied Physics Letters. New York. Vol. 74, no. 6 (Feb. 1999), p. 806-808
Assunto Filmes finos dieletricos
Implantacao de ions
Método de Monte Carlo
Nitrogenio
Plasmas
Reacoes nucleares
Recozimento
Silicio
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/140716
Arquivos Descrição Formato
000239743.pdf (429.4Kb) Texto completo (inglês) Adobe PDF Visualizar/abrir

Este item está licenciado na Creative Commons License

Este item aparece na(s) seguinte(s) coleção(ões)


Mostrar registro completo

Percorrer



  • O autor é titular dos direitos autorais dos documentos disponíveis neste repositório e é vedada, nos termos da lei, a comercialização de qualquer espécie sem sua autorização prévia.
    Projeto gráfico elaborado pelo Caixola - Clube de Criação Fabico/UFRGS Powered by DSpace software, Version 1.8.1.