Metastable acceptor centers in boron implanted silicon
dc.contributor.author | Souza, Joel Pereira de | pt_BR |
dc.contributor.author | Boudinov, Henri Ivanov | pt_BR |
dc.date.accessioned | 2016-05-11T02:10:26Z | pt_BR |
dc.date.issued | 1995 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/140717 | pt_BR |
dc.description.abstract | The evolution of the electrical activation with the annealing time in B1 implanted (5.0 31014 cm22, 50 keV! Si was studied as a function of the annealing temperature. Electrical activation yields of 15%–30% were observed after annealing for 2 s at temperatures above 550 °C. Prolonging the annealing time from 2 to 900 s we observed that the electrical activation evolves differently according to the temperature: ~i! at 550 °C,T,700 °C it decreases toward an equilibrium level, ~ii! at 700 °C,T,800 °C it decreases during the first minutes and subsequently increases again, and ~iii! at temperatures ,550 °C or T.800 °C it increases continuously. In order to explain the carrier removal observed during annealing at 550–800 °C we proposed that metastable acceptor centers are formed during the B1 implantation and/or the initial period of the annealing time. Interaction of Si self-interstitial atoms with these centers leads to their neutralization and/or dissociation with consequent decreasing of the carrier concentration. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. New York. Vol. 66, n. 23 (June 1995), p. 3173-3175 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.subject | Dopagem de semicondutores | pt_BR |
dc.subject | Dislocacoes | pt_BR |
dc.subject | Ionização | pt_BR |
dc.title | Metastable acceptor centers in boron implanted silicon | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000262599 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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