Electrical activation of carbon in GaAs : implantation temperature effects
dc.contributor.author | Danilov, Iuri | pt_BR |
dc.contributor.author | Souza, Joel Pereira de | pt_BR |
dc.contributor.author | Murel, A.V. | pt_BR |
dc.contributor.author | Pudenzi, Marcio Alberto Araujo | pt_BR |
dc.date.accessioned | 2016-05-14T02:07:38Z | pt_BR |
dc.date.issued | 2001 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141074 | pt_BR |
dc.description.abstract | Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80 K compared to those implanted at RT or 300 °C, attaining a maximum hole concentration of 231019 cm23. The redistribution of the C profile during rapid thermal annealing at temperatures from 700 to 950 °C for 10 s was found negligible, independently of the implantation temperature. Similar improvements in the electrical properties were also verified in samples implanted at 80 K with a lower energy of 60 keV. We consider that despite the light mass of C ions, the reduced dynamic annealing at 80 K allows the accumulation of an abundance of As vacancies, which assist the C activation as a p-type dopant. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Melville. Vol. 78, no. 12 (Mar. 2001), p. 1700-1702 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Carbono | pt_BR |
dc.subject | Semicondutores iii-v | pt_BR |
dc.subject | Estados de impureza | pt_BR |
dc.subject | Implantacao ionica | pt_BR |
dc.subject | Recozimento térmico rápido | pt_BR |
dc.title | Electrical activation of carbon in GaAs : implantation temperature effects | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000284611 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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