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dc.contributor.authorDanilov, Iuript_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorMurel, A.V.pt_BR
dc.contributor.authorPudenzi, Marcio Alberto Araujopt_BR
dc.date.accessioned2016-05-14T02:07:38Zpt_BR
dc.date.issued2001pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141074pt_BR
dc.description.abstractCarbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80 K compared to those implanted at RT or 300 °C, attaining a maximum hole concentration of 231019 cm23. The redistribution of the C profile during rapid thermal annealing at temperatures from 700 to 950 °C for 10 s was found negligible, independently of the implantation temperature. Similar improvements in the electrical properties were also verified in samples implanted at 80 K with a lower energy of 60 keV. We consider that despite the light mass of C ions, the reduced dynamic annealing at 80 K allows the accumulation of an abundance of As vacancies, which assist the C activation as a p-type dopant.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 78, no. 12 (Mar. 2001), p. 1700-1702pt_BR
dc.rightsOpen Accessen
dc.subjectCarbonopt_BR
dc.subjectSemicondutores iii-vpt_BR
dc.subjectEstados de impurezapt_BR
dc.subjectImplantacao ionicapt_BR
dc.subjectRecozimento térmico rápidopt_BR
dc.titleElectrical activation of carbon in GaAs : implantation temperature effectspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000284611pt_BR
dc.type.originEstrangeiropt_BR


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