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Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon

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Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon

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Título Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
Autor Fichtner, Paulo Fernando Papaleo
Behar, Moni
Kaschny, Jorge Ricardo de Araujo
Peeva, Anita
Koegler, Reinhard
Skorupa, Wolfgang
Abstract He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. A subsequent annealing at 800 °C was performed in order to anneal the implantation damage and redistribute the Cu into the wafer. The samples were analyzed by Rutherford backscattering channeling and transmission electron microscopy techniques. The Cu distribution was measured by secondary ion mass spectrometry (SIMS). The SIMS experiments show that, while the 350 °C implant induces gettering at the He projected range (Rp) region, the same implant performed at RT has given as a result, gettering at both the Rp and Rp/2 depths. Hence, this work demonstrates that the Rp/2 effect can be induced by a light ion implanted at low energy into channeling direction.
Contido em Applied physics letters. Melville. Vol. 77, no. 7 (Aug. 2000), p. 972-974
Assunto Cobre
Dopagem de semicondutores
Espectroscopia de massa de ions secundarios
Hélio
Implantacao de ions
Impurezas
Microscopia eletronica de transmissao
Perda de energia de particulas
Recozimento
Retroespalhamento rutherford
Semicondutores
Silicio
Tunelamento
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/141127
Arquivos Descrição Formato
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