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dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.contributor.authorBehar, Monipt_BR
dc.contributor.authorKaschny, Jorge Ricardo de Araujopt_BR
dc.contributor.authorPeeva, Anitapt_BR
dc.contributor.authorKoegler, Reinhardpt_BR
dc.contributor.authorSkorupa, Wolfgangpt_BR
dc.date.accessioned2016-05-14T02:08:22Zpt_BR
dc.date.issued2000pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141127pt_BR
dc.description.abstractHe1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. A subsequent annealing at 800 °C was performed in order to anneal the implantation damage and redistribute the Cu into the wafer. The samples were analyzed by Rutherford backscattering channeling and transmission electron microscopy techniques. The Cu distribution was measured by secondary ion mass spectrometry (SIMS). The SIMS experiments show that, while the 350 °C implant induces gettering at the He projected range (Rp) region, the same implant performed at RT has given as a result, gettering at both the Rp and Rp/2 depths. Hence, this work demonstrates that the Rp/2 effect can be induced by a light ion implanted at low energy into channeling direction.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 77, no. 7 (Aug. 2000), p. 972-974pt_BR
dc.rightsOpen Accessen
dc.subjectHéliopt_BR
dc.subjectCobrept_BR
dc.subjectSilíciopt_BR
dc.subjectTunelamentopt_BR
dc.subjectEspectroscopia de massa de ions secundariospt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectPerda de energia de particulaspt_BR
dc.subjectRecozimentopt_BR
dc.subjectSemicondutorespt_BR
dc.subjectImpurezaspt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectDopagem de semicondutorespt_BR
dc.subjectMicroscopia eletrônica de transmissãopt_BR
dc.titleCopper gettering at half the projected ion range induced by low-energy channeling He implantation into siliconpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000275257pt_BR
dc.type.originEstrangeiropt_BR


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