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dc.contributor.authorRadtke, Claudiopt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorMorais, Jonderpt_BR
dc.contributor.authorStedile, Fernanda Chiarellopt_BR
dc.date.accessioned2016-05-14T02:08:34Zpt_BR
dc.date.issued2001pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141146pt_BR
dc.description.abstractInitial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 78, no. 23 (June 2001), p. 3601-3603pt_BR
dc.rightsOpen Accessen
dc.subjectCompostos de silíciopt_BR
dc.subjectEspectro de fotoeletrons produzidos por raios-xpt_BR
dc.subjectFilmes finospt_BR
dc.subjectSilíciopt_BR
dc.subjectOxidaçãopt_BR
dc.titleInitial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopiespt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000292331pt_BR
dc.type.originEstrangeiropt_BR


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