Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
dc.contributor.author | Radtke, Claudio | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Morais, Jonder | pt_BR |
dc.contributor.author | Stedile, Fernanda Chiarello | pt_BR |
dc.date.accessioned | 2016-05-14T02:08:34Z | pt_BR |
dc.date.issued | 2001 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141146 | pt_BR |
dc.description.abstract | Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Melville. Vol. 78, no. 23 (June 2001), p. 3601-3603 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Compostos de silício | pt_BR |
dc.subject | Espectro de fotoeletrons produzidos por raios-x | pt_BR |
dc.subject | Filmes finos | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Oxidação | pt_BR |
dc.title | Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000292331 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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