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Thermal stability of plasma-nitrided aluminum oxide films on Si

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Thermal stability of plasma-nitrided aluminum oxide films on Si

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Título Thermal stability of plasma-nitrided aluminum oxide films on Si
Autor Bastos, Karen Paz
Pezzi, Rafael Peretti
Miotti, Leonardo
Soares, Gabriel Vieira
Driemeier, Carlos Eduardo
Morais, Jonder
Baumvol, Israel Jacob Rabin
Hinkle, C.
Lucovsky, Gerald
Abstract The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si were determined by nuclear reaction analysis and their concentration versus depth distributions by narrow nuclear reaction resonance profiling, with subnanometric depth resolution. Annealing in both vacuum and O2 atmospheres produced partial loss of N from the near-surface regions of the films and its transport into near-interface regions of the Si substrate. Oxygen from the gas phase was incorporated in the AlON films in exchange for O and N previously existing therein, as well as in the near-interface regions of the Si substrate, leading to oxynitridation of the substrate. Al and Si remained essentially immobile under rapid thermal processing, confirming that the presence of nitrogen improves the thermal stability characteristics of the AlON/ Si structures in comparison with non-nitrided Al2O3 /Si.
Contido em Applied physics letters. Melville. Vol. 84, no. 1 (Jan. 2004), p. 97-99
Assunto Análise química nuclear
Compostos de alumínio
Estabilidade termica
Filmes finos
Nitretacao
Semicondutores elementares
Silicio
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/141202
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