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dc.contributor.authorMorais, Jonderpt_BR
dc.contributor.authorRosa, Elisa Brod Oliveira dapt_BR
dc.contributor.authorPezzi, Rafael Perettipt_BR
dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.date.accessioned2016-05-17T02:07:21Zpt_BR
dc.date.issued2001pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141205pt_BR
dc.description.abstractThe stability of a ZrAlxOy film sputtered on Si upon thermal annealing in vacuum or in O2 was investigated. X-ray diffraction indicated that the as-deposited film was amorphous and remained so after annealing. Rutherford backscattering, narrow nuclear resonance profiling, and low-energy ion scattering provided the average composition of the film and the depth distributions of different elements. Chemical analysis of these elements was accessed by x-ray photoelectron spectroscopy. Annealing in vacuum produced thickness inhomogeneities and/or transport of very small amounts of Si from the substrate into the overlying film, with formation of Si precipitates. Annealing in O2 led to oxygen exchange throughout the film, as well as Si transport in slightly higher amounts than in vacuum. Differently from the observed upon annealing in vacuum, Si was either incorporated into the Zr,Al–O framework or oxidized in SiO2.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 79, no. 13 (Sept. 2001), p. 1998-2000pt_BR
dc.rightsOpen Accessen
dc.subjectCompostos de alumíniopt_BR
dc.subjectRecozimentopt_BR
dc.subjectInterdifusao quimicapt_BR
dc.subjectFilmes finos dieletricospt_BR
dc.subjectImpacto ion-superfíciept_BR
dc.subjectEstrutura não-cristalinapt_BR
dc.subjectAnálise química nuclearpt_BR
dc.subjectPrecipitaçãopt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectRevestimento por pulverizaçãopt_BR
dc.subjectDifração de raios Xpt_BR
dc.subjectEspectro de fotoeletrons produzidos por raios-xpt_BR
dc.subjectCompostos de zirconiopt_BR
dc.titleComposition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000306494pt_BR
dc.type.originEstrangeiropt_BR


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