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dc.contributor.authorPosselt, Matthiaspt_BR
dc.contributor.authorMäder, M.pt_BR
dc.contributor.authorGrötzschel, Rainerpt_BR
dc.contributor.authorBehar, Monipt_BR
dc.date.accessioned2016-05-17T02:07:22Zpt_BR
dc.date.issued2003pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141209pt_BR
dc.description.abstractPhosphorus depth profiles in Si obtained by 140 keV implantation in the [001] axial channel direction and in a direction 7° off axis are investigated at two different doses (531013 and 5 31015 cm22) for implantation temperatures of 350 °C and room temperature (RT). At low dose and at channeling incidence, the penetration depth of implanted ions is higher at RT than at 350 °C. This behavior is caused by the dechanneling of lattice vibrations. At high dose, the temperature dependence of the shape of the implantation profile is opposite that at low dose, due to enhanced dechanneling by defect accumulation at RT. On the other hand, damage buildup does not occur at elevated temperature. The temperature dependence of the profiles obtained by tilted implantation is much less than for the channeled implants. The P profiles measured can be reproduced very well by atomistic simulations which take into account both lattice vibrations and defect accumulation during ion bombardment.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 83, no. 3 (July 2003), p. 545-547pt_BR
dc.rightsOpen Accessen
dc.subjectCanalizaçãopt_BR
dc.subjectSemicondutores elementarespt_BR
dc.subjectPerda de energia de particulaspt_BR
dc.subjectEfeitos de feixe iônicopt_BR
dc.subjectImplantacao ionicapt_BR
dc.subjectDinamica de redept_BR
dc.subjectFósforopt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectSilíciopt_BR
dc.titleCompeting influence of damage buildup and lattice vibrations on ion range profiles in Sipt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000379537pt_BR
dc.type.originEstrangeiropt_BR


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