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Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation

dc.contributor.authorVan Lippen, Twanpt_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorTan, Hoe H.pt_BR
dc.contributor.authorJagadish, Chenupatipt_BR
dc.date.accessioned2016-05-17T02:07:27Zpt_BR
dc.date.issued2002pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141219pt_BR
dc.description.abstractThe evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 80, no. 2 (Jan. 2002), p. 264-266pt_BR
dc.rightsOpen Accessen
dc.subjectCompostos de alumíniopt_BR
dc.subjectDensidade de portadorespt_BR
dc.subjectNíveis profundospt_BR
dc.subjectEstabilidade térmicapt_BR
dc.titleElectrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiationpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000313579pt_BR
dc.type.originEstrangeiropt_BR


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