Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si
dc.contributor.author | Impellizzeri, Giuliana | pt_BR |
dc.contributor.author | Santos, Jose Henrique Rodrigues dos | pt_BR |
dc.contributor.author | Mirabella, Salvatore | pt_BR |
dc.contributor.author | Priolo, Francesco | pt_BR |
dc.contributor.author | Napolitani, Enrico | pt_BR |
dc.contributor.author | Carnera, Alberto | pt_BR |
dc.date.accessioned | 2016-05-17T02:07:31Z | pt_BR |
dc.date.issued | 2004 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141227 | pt_BR |
dc.description.abstract | We have explained the role of fluorine in the reduction of the self-interstitial population in a preamorphized Si layer under thermal treatment. For this purpose, we have employed a B spike layer grown by molecular-beam epitaxy as a marker for the self-interstitial local concentration. The amorphized samples were implanted with 731012, 731013, or 431014 F/cm2 at 100 keV, and afterwards recrystallized by solid phase epitaxy. Thermal anneals at 750 or 850 °C were performed in order to induce the release of self-interstitials from the end-of-range (EOR) defects and thus provoke the transient enhanced diffusion of B atoms. We have shown that the incorporation of F reduces the B enhanced diffusion in a controlled way, up to its complete suppression. It is seen that no direct interaction between B and F occurs, whereas the suppression of B enhanced diffusion is related to the F ability in reducing the excess of silicon self-interstitials emitted by the EOR source. These results are reported and discussed. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Vol. 84, no. 11 (Mar. 2004), p. 1862-1864 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Ligações químicas | pt_BR |
dc.subject | Boro | pt_BR |
dc.subject | Difusão | pt_BR |
dc.subject | Semicondutores elementares | pt_BR |
dc.subject | Flúor | pt_BR |
dc.subject | Intersticiais | pt_BR |
dc.subject | Recristalizacao | pt_BR |
dc.subject | Silício | pt_BR |
dc.title | Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000413283 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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