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dc.contributor.authorLopes, João Marcelo Jordãopt_BR
dc.contributor.authorZawislak, Fernando Claudiopt_BR
dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.contributor.authorPapaleo, Ricardo Meurerpt_BR
dc.contributor.authorLovey, Francisco Carlospt_BR
dc.contributor.authorCondó, Adriana M.pt_BR
dc.contributor.authorTolley, Alfredo J.pt_BR
dc.date.accessioned2016-05-19T02:09:22Zpt_BR
dc.date.issued2005pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141284pt_BR
dc.description.abstract180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands epitaxially attached to the Si was observed at the SiO2/Sis100d interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2 /Si interface and the appearance of the island system is discussed in terms of the Sn–Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 86, no. 19 (May 2005), 191914, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectInterdifusao quimicapt_BR
dc.subjectSemicondutores elementarespt_BR
dc.subjectImplantacao ionicapt_BR
dc.subjectSilíciopt_BR
dc.subjectCompostos de silíciopt_BR
dc.subjectEstanhopt_BR
dc.titleFormation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ionspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000530391pt_BR
dc.type.originEstrangeiropt_BR


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