Environment of hafnium and silicon in Hf-based dielectric films : an atomistic study by x-ray absorption spectroscopy and x-ray diffraction
dc.contributor.author | Morais, Jonder | pt_BR |
dc.contributor.author | Miotti, Leonardo | pt_BR |
dc.contributor.author | Bastos, Karen Paz | pt_BR |
dc.contributor.author | Teixeira, Sergio Ribeiro | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Rotondaro, Antonio L.P. | pt_BR |
dc.contributor.author | Chambers, James Joseph | pt_BR |
dc.contributor.author | Visokay, Mark R. | pt_BR |
dc.contributor.author | Colombo, Luigi | pt_BR |
dc.contributor.author | Alves, Maria do Carmo Martins | pt_BR |
dc.date.accessioned | 2016-05-19T02:09:40Z | pt_BR |
dc.date.issued | 2005 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141313 | pt_BR |
dc.description.abstract | The atomic structure of HfSiO and HfSiON was investigated before and after thermal annealing using x-ray diffraction and x-ray absorption spectroscopy. In HfSiO, the Hf atoms are arranged in a monoclinic HfO2 structure with Hf as second nearest neighbors, while Si is in a SiO2 environment. Thermal annealing induces crystallization of HfSiO with subtle changes in Hf–Hf distances. In the case of HfSiON, a stable structure is observed around the Hf atoms, which remains unaffected after annealing. Nitrogen is present in the first coordination shell of the Hf atoms, with Si in a SiON environment. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. New York. Vol. 86, no. 21 (May 2005), 212906, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Espectroscopia de absorção | pt_BR |
dc.subject | Espectroscopia de raio x | pt_BR |
dc.subject | Raios X : Difração | pt_BR |
dc.subject | Estrutura cristalina | pt_BR |
dc.subject | Cristalização | pt_BR |
dc.subject | Filmes finos dieletricos | pt_BR |
dc.subject | Compostos de silício | pt_BR |
dc.subject | Espectros de absorção de raios-x | pt_BR |
dc.subject | Difração de raios X | pt_BR |
dc.subject | Silício | pt_BR |
dc.title | Environment of hafnium and silicon in Hf-based dielectric films : an atomistic study by x-ray absorption spectroscopy and x-ray diffraction | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000469582 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
Este item está licenciado na Creative Commons License
-
Artigos de Periódicos (39042)Ciências Exatas e da Terra (5930)