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dc.contributor.authorDriemeier, Carlos Eduardopt_BR
dc.contributor.authorBastos, Karen Pazpt_BR
dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorNguyen, N. V.pt_BR
dc.contributor.authorSayan, S.pt_BR
dc.contributor.authorKrug, Cristianopt_BR
dc.date.accessioned2016-05-19T02:09:44Zpt_BR
dc.date.issued2005pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141320pt_BR
dc.description.abstractWe have used nuclear reaction analyses and Rutherford backscattering spectrometry to investigate quantitatively the compositional stability of hafnium aluminate thin films deposited on Sis001d by atomic layer deposition using HfCl4/H2O and AlsCH3d3/H2O precursors. It was found that increasing Al/Hf deposition cycles ratio leads to increasing oxygen deficiency in the as-deposited films as well as to increasing metal losses sup to ,15%d from the films after rapid thermal annealing at 1000 °C. Furthermore, isotopic substitution experiments, showed that incorporation of oxygen from the gas phase is eased in the cases where deposition conditions failed to supply enough oxygen to complete oxides stoichiometry.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Vol. 86, no. 22 (May 2005), 221911, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectAluminapt_BR
dc.subjectFilmes finos dieletricospt_BR
dc.subjectRecozimento térmico rápidopt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectEstequiometriapt_BR
dc.titleCompositional stability of hafnium aluminates thin films deposited on Si by atomic layer depositionpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000523045pt_BR
dc.type.originEstrangeiropt_BR


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