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Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

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Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

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Título Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
Autor Miotti, Leonardo
Driemeier, Carlos Eduardo
Tatsch, Felipe Wolff
Radtke, Claudio
Baumvol, Israel Jacob Rabin
Abstract Metal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C induces decomposition of the aluminate films leading to Hf and Al losses mainly into the gas phase. It was possible to avoid this undesired decomposition effect by performing a postdeposition nitridation in NH3 at 850 °C prior to the rapid thermal annealing step. The role of nitridation is discussed in terms of the profiles of incorporated N, before and after rapid thermal annealing, as determined by narrow resonant nuclear reaction profiling.
Contido em Applied physics letters. Vol. 89. no. 1 (July 2006), 012904, 3 p.
Assunto Alumínio
Compostos de háfnio
Decomposição
Filmes finos dieletricos
Nitretacao
Recozimento térmico rápido
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/141396
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