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dc.contributor.authorJagannathan, Hemanthpt_BR
dc.contributor.authorNishi, Yoshiopt_BR
dc.contributor.authorReuter, Markpt_BR
dc.contributor.authorCopel, Matthewpt_BR
dc.contributor.authorTutuc, Emanuelpt_BR
dc.contributor.authorGuha, Supratikpt_BR
dc.contributor.authorPezzi, Rafael Perettipt_BR
dc.date.accessioned2016-05-20T02:10:22Zpt_BR
dc.date.issued2006pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141400pt_BR
dc.description.abstractA direct dependence between the inadvertent formation of SiO2 on gold films deposited on silicon 111 substrates, and the nucleation and yield of epitaxial, gold catalyzed, silicon nanowires grown on such substrates is reported. The unintended SiO2 layer formed due to the diffusion of silicon from the underlying substrate through the gold film is observed to be 0.5 nm with medium energy ion scattering after brief exposures of 10–15 min in air. Silicon nanowires grown at 500 °C on such samples show reduced nucleation and growth. A remarkable improvement in nanowire nucleation density and epitaxy is observed on removing the SiO2 overlayer prior nanowire growth.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Vol. 88, no. 10 (Mar. 2006), 103113, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectNucleaçãopt_BR
dc.subjectDifusãopt_BR
dc.titleEffect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowirespt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000555797pt_BR
dc.type.originEstrangeiropt_BR


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