Repositório Digital

A- A A+

Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si

.

Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si

Mostrar registro completo

Estatísticas

Título Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
Autor Pezzi, Rafael Peretti
Copel, Matthew
Gordon, Michael
Cartier, Eduard
Baumvol, Israel Jacob Rabin
Abstract Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and HfO2 films as dielectric on Si 001 . Isotopic tracing, nuclear reaction analysis, narrow resonant nuclear reaction profiling, and x-ray photoelectron spectroscopy were used to pursue this investigation. For annealing temperatures below 400 °C, oxygen from the gas phase incorporates mainly in near-surface regions of the overlying Re cap. Significant oxygen incorporation into the HfO2 films is observed only after annealing at 500 °C. The present results are discussed considering that supplying oxygen to the metal/dielectric interface can cause device threshold voltage shifts.
Contido em Applied physics letters. Vol. 88, no. 24 (June 2006), 243509, 3 p.
Assunto Física
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/141420
Arquivos Descrição Formato
000555742.pdf (602.0Kb) Texto completo Adobe PDF Visualizar/abrir

Este item está licenciado na Creative Commons License

Este item aparece na(s) seguinte(s) coleção(ões)


Mostrar registro completo

Percorrer



  • O autor é titular dos direitos autorais dos documentos disponíveis neste repositório e é vedada, nos termos da lei, a comercialização de qualquer espécie sem sua autorização prévia.
    Projeto gráfico elaborado pelo Caixola - Clube de Criação Fabico/UFRGS Powered by DSpace software, Version 1.8.1.