|Título||Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
Pezzi, Rafael Peretti
Baumvol, Israel Jacob Rabin
|Abstract||Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and HfO2 films as dielectric on Si 001 . Isotopic tracing, nuclear reaction analysis, narrow resonant nuclear reaction profiling, and x-ray photoelectron spectroscopy were used to pursue this investigation. For annealing temperatures below 400 °C, oxygen from the gas phase incorporates mainly in near-surface regions of the overlying Re cap. Significant oxygen incorporation into the HfO2 films is observed only after annealing at 500 °C. The present results are discussed considering that supplying oxygen to the metal/dielectric interface can cause device threshold voltage shifts.
|Contido em||Applied physics letters. Vol. 88, no. 24 (June 2006), 243509, 3 p.
|Tipo||Artigo de periódico
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