Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
dc.contributor.author | Pezzi, Rafael Peretti | pt_BR |
dc.contributor.author | Copel, Matthew | pt_BR |
dc.contributor.author | Gordon, Michael | pt_BR |
dc.contributor.author | Cartier, Eduard | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.date.accessioned | 2016-05-20T02:10:32Z | pt_BR |
dc.date.issued | 2006 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141420 | pt_BR |
dc.description.abstract | Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and HfO2 films as dielectric on Si 001 . Isotopic tracing, nuclear reaction analysis, narrow resonant nuclear reaction profiling, and x-ray photoelectron spectroscopy were used to pursue this investigation. For annealing temperatures below 400 °C, oxygen from the gas phase incorporates mainly in near-surface regions of the overlying Re cap. Significant oxygen incorporation into the HfO2 films is observed only after annealing at 500 °C. The present results are discussed considering that supplying oxygen to the metal/dielectric interface can cause device threshold voltage shifts. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Vol. 88, no. 24 (June 2006), 243509, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física | pt_BR |
dc.title | Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000555742 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
Este item está licenciado na Creative Commons License
-
Artigos de Periódicos (39042)Ciências Exatas e da Terra (5930)