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dc.contributor.authorDriemeier, Carlos Eduardopt_BR
dc.contributor.authorGusev, Evgeni P.pt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.date.accessioned2016-05-20T02:10:59Zpt_BR
dc.date.issued2006pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141461pt_BR
dc.description.abstractHfO2 /SiO2/Si 001 thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i the formation of strongly bonded hydroxyls at the HfO2 surface; ii room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied Physics Letters. New York. Vol. 88, no. 20 (May 2006), 201901, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectFísicapt_BR
dc.titleRoom temperature interactions of water vapor with HfO/sub 2/ films on Sipt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000564735pt_BR
dc.type.originEstrangeiropt_BR


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