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Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

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Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

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Título Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling
Autor Miotti, Leonardo
Bastos, Karen Paz
Soares, Gabriel Vieira
Driemeier, Carlos Eduardo
Pezzi, Rafael Peretti
Morais, Jonder
Baumvol, Israel Jacob Rabin
Rotondaro, Antonio L.P.
Visokay, Mark R.
Chambers, James Joseph
Quevedo-Lopez, M.
Colombo, Luigi
Abstract HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N2 and O2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport and exchange of the chemical species, using Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Annealing in O2 ambient reduced the N concentration mainly from near-surface regions where oxygen was incorporated in comparable amounts. Vacuum annealing, on the other hand, induced N loss preferentially from the Si/dielectric interface and O loss preferentially from near-surface regions. The results are explained in terms of exchange-diffusion reactions occurring in the HfSiON.
Contido em Applied physics letters. Melville. Vol. 85, no. 19 (Nov. 2004), p. 4460-4462
Assunto Filmes finos
Óxido de silício
Oxinitruro de háfnio silício
Reacoes nucleares
Retroespalhamento rutherford
Silicio
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/141683
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