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Atomic transport and integrity of Al/sub 2/O/sub 3(2.0 nm)/HfO/sub 2/(2.5 nm) gate stacks on Si

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Atomic transport and integrity of Al/sub 2/O/sub 3(2.0 nm)/HfO/sub 2/(2.5 nm) gate stacks on Si

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Título Atomic transport and integrity of Al/sub 2/O/sub 3(2.0 nm)/HfO/sub 2/(2.5 nm) gate stacks on Si
Autor Miotti, Leonardo
Pezzi, Rafael Peretti
Copel, Matthew
Krug, Cristiano
Baumvol, Israel Jacob Rabin
Abstract The integrity of Al2O3 2.0 nm /HfO2 2.5 nm /SiO2 1 nm /Si 001 stacks after rapid thermal annealing at temperature up to 1025 °C was investigated. The structures were prepared by atomic layer deposition and atomic transport was accessed by profiling all elements in the system with subnanometric depth resolution, using medium and low energy ion scattering and narrow resonant nuclear reaction profiling. Al migration toward the stack/Si interface, Al loss by desorption from the surface, and Hf transport across the Al2O3 film layer toward the outermost surface were observed. The loss of oxygen from the stack is also noticeable, most probably caused by compound dissociation and desorption of oxygen containing species. The possible detrimental effects on device electrical properties of the observed presence of Hf at the outermost surface of the dielectric stack and of Al at the dielectric/Si interface are discussed.
Contido em Applied physics letters. Vol. 90, no. 5 (Jan. 2007), 052913, 3 p.
Assunto Alumina
Compostos de háfnio
Dissociacao molecular
Filmes finos
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/141688
Arquivos Descrição Formato
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