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Oxygen transport and GeO2 stability during thermal oxidation of Ge

dc.contributor.authorSilva, Samoel Renan Mello dapt_BR
dc.contributor.authorRolim, Guilherme Koszeniewskipt_BR
dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorKrug, Cristianopt_BR
dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorFreire Junior, Fernando Lazaropt_BR
dc.contributor.authorCosta, Marcelo Eduardo Huguenin Maia dapt_BR
dc.contributor.authorRadtke, Claudiopt_BR
dc.date.accessioned2016-05-24T02:10:43Zpt_BR
dc.date.issued2012pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141695pt_BR
dc.description.abstractOxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 100, no. 19 (May 2012), 191907, 4 p.pt_BR
dc.rightsOpen Accessen
dc.subjectOxidaçãopt_BR
dc.subjectDesorpcaopt_BR
dc.subjectGermâniopt_BR
dc.titleOxygen transport and GeO2 stability during thermal oxidation of Gept_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000852457pt_BR
dc.type.originEstrangeiropt_BR


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