|Título||Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks
Baumvol, Israel Jacob Rabin
|Abstract||The electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67 mA/cm2 for an equivalent oxide thickness of 1.1 nm have been determined, whereas non-nitrided capacitors gave substantially lower dielectric constant and higher gate current density. The structure and integrity of the stacks after thermal annealing were accessed by means of spectroscopic ellipsometry and x-ray reflectometry, indicating that thermal N incorporation into the gate dielectric stacks forms an effective diffusion barrier, leading to a smoother, SiO2-like interface. The HfAlO films grown on nitrided substrates were seen also to have lower porosity, percentage of voids, and density of oxygen vacancies.
|Contido em||Applied physics letters. Vol. 90, no. 12 (Mar. 2007), 122905, 3 p.
Filmes finos dieletricos
|Tipo||Artigo de periódico
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