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Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks

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Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks

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Título Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks
Autor Edon, Vincent
Li, Z.
Hugon, Marie-Christine
Agius, Bernard
Krug, Cristiano
Baumvol, Israel Jacob Rabin
Durand, Olivier
Eypert, Céline
Abstract The electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67 mA/cm2 for an equivalent oxide thickness of 1.1 nm have been determined, whereas non-nitrided capacitors gave substantially lower dielectric constant and higher gate current density. The structure and integrity of the stacks after thermal annealing were accessed by means of spectroscopic ellipsometry and x-ray reflectometry, indicating that thermal N incorporation into the gate dielectric stacks forms an effective diffusion barrier, leading to a smoother, SiO2-like interface. The HfAlO films grown on nitrided substrates were seen also to have lower porosity, percentage of voids, and density of oxygen vacancies.
Contido em Applied physics letters. Vol. 90, no. 12 (Mar. 2007), 122905, 3 p.
Assunto Capacitores
Filmes finos dieletricos
Propriedades dielétricas
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/141706
Arquivos Descrição Formato
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