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dc.contributor.authorEdon, Vincentpt_BR
dc.contributor.authorLi, Z.pt_BR
dc.contributor.authorHugon, Marie-Christinept_BR
dc.contributor.authorAgius, Bernardpt_BR
dc.contributor.authorKrug, Cristianopt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorDurand, Olivierpt_BR
dc.contributor.authorEypert, Célinept_BR
dc.date.accessioned2016-05-24T02:10:48Zpt_BR
dc.date.issued2007pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141706pt_BR
dc.description.abstractThe electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67 mA/cm2 for an equivalent oxide thickness of 1.1 nm have been determined, whereas non-nitrided capacitors gave substantially lower dielectric constant and higher gate current density. The structure and integrity of the stacks after thermal annealing were accessed by means of spectroscopic ellipsometry and x-ray reflectometry, indicating that thermal N incorporation into the gate dielectric stacks forms an effective diffusion barrier, leading to a smoother, SiO2-like interface. The HfAlO films grown on nitrided substrates were seen also to have lower porosity, percentage of voids, and density of oxygen vacancies.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Vol. 90, no. 12 (Mar. 2007), 122905, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectPropriedades dielétricaspt_BR
dc.subjectCapacitorespt_BR
dc.subjectFilmes finos dieletricospt_BR
dc.titleElectrical characteristics and interface structure of HfAIO/SiON/Si(001) stackspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000656363pt_BR
dc.type.originEstrangeiropt_BR


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