Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks
dc.contributor.author | Edon, Vincent | pt_BR |
dc.contributor.author | Li, Z. | pt_BR |
dc.contributor.author | Hugon, Marie-Christine | pt_BR |
dc.contributor.author | Agius, Bernard | pt_BR |
dc.contributor.author | Krug, Cristiano | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Durand, Olivier | pt_BR |
dc.contributor.author | Eypert, Céline | pt_BR |
dc.date.accessioned | 2016-05-24T02:10:48Z | pt_BR |
dc.date.issued | 2007 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141706 | pt_BR |
dc.description.abstract | The electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67 mA/cm2 for an equivalent oxide thickness of 1.1 nm have been determined, whereas non-nitrided capacitors gave substantially lower dielectric constant and higher gate current density. The structure and integrity of the stacks after thermal annealing were accessed by means of spectroscopic ellipsometry and x-ray reflectometry, indicating that thermal N incorporation into the gate dielectric stacks forms an effective diffusion barrier, leading to a smoother, SiO2-like interface. The HfAlO films grown on nitrided substrates were seen also to have lower porosity, percentage of voids, and density of oxygen vacancies. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Vol. 90, no. 12 (Mar. 2007), 122905, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Propriedades dielétricas | pt_BR |
dc.subject | Capacitores | pt_BR |
dc.subject | Filmes finos dieletricos | pt_BR |
dc.title | Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000656363 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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