|Título||Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
Soares, Gabriel Vieira
Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
|Abstract||Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film formation which are discussed.
|Contido em||Applied physics letters. Vol. 91, no. 4 (July 2007), 041906, 3 p.
Carbeto de silicio
|Tipo||Artigo de periódico
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