|Título||Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
|Abstract||C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region.
|Contido em||Applied physics letters. New York. Vol. 94, no. 25 (June 2009), 251909, 3 p.
Carbeto de silício
Filmes finos dieletricos
Semicondutores de gap largo
|Tipo||Artigo de periódico
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