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Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

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Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

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Título Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
Autor Corrêa, Silma Alberton
Radtke, Claudio
Soares, Gabriel Vieira
Miotti, Leonardo
Baumvol, Israel Jacob Rabin
Dimitrijev, Sima
Han, J.
Hold, L.
Kong, F.
Stedile, Fernanda Chiarello
Abstract C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region.
Contido em Applied physics letters. New York. Vol. 94, no. 25 (June 2009), 251909, 3 p.
Assunto Carbeto de silicio
Filmes finos dieletricos
Nitrogenio
Semicondutores de gap largo
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/141728
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