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Improved Ge surface passivation with ultrathin SiO/sub x/ enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

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Improved Ge surface passivation with ultrathin SiO/sub x/ enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

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Título Improved Ge surface passivation with ultrathin SiO/sub x/ enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
Autor Joshi, Sachin
Krug, Cristiano
Heh, Dawei
Na, Hoon Joo
Harris, Harlan R.
Oh, Jung Woo
Kirsch, Paul D.
Majhi, Prashant
Lee, Byoung Hun
Tseng, Hsing-Huang
Jammy, Raj
Lee, Jack C.
Banerjee, Sanjay K.
Abstract To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer between the bulk Ge substrate and HfSiO gate dielectric was introduced. This approach provides a simple alternative to epitaxial Si deposition followed by selective oxidation and leads to one of the highest peak hole mobilities reported for unstrained surface channel pMOSFETs on Ge: 332 cm2 • V−1 • s−1 at 0.05 MV/cm—a 2× enhancement over the universal Si/SiO2 mobility. The devices show well-behaved output and transfer characteristics, an equivalent oxide thickness of 1.85 nm and an ION/IOFF ratio of 3 × 103 without detectable fast transient charging. The high hole mobility of these devices is attributed to adequate passivation of the Ge surface.
Contido em IEEE electron device letters. Vol. 28, no. 4 (Apr. 2007), p. 308-311
Assunto Germânio
Propriedades dielétricas
[en] Germanium
[en] High mobility
[en] High-κ
[en] Metal gate
[en] pMOSFET
[en] Surface passivation
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/27607
Arquivos Descrição Formato
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