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Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures

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Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures

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Título Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
Autor Corrêa, Silma Alberton
Soares, Gabriel Vieira
Tanner, Philip
Han, Jisheng
Dimitrijev, Sima
Stedile, Fernanda Chiarello
Abstract The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O 2 , NO, or O 2 followed by annealing in NO was investigated. The amount and the distribution of hydrogen incorporated and the capacitance-voltage characteristics were observed to be dependent on the thermal growth route employed. Hydrogen was mainly incorporated in the dielectric film/SiC interface region and larger amounts were incorporated when the Pt electrode was used. Annealing in hydrogen increased the negative shift in the flatband voltage, which was more pronounced when the Pt electrode was used in the case of NO-annealed SiO 2 /SiC sample.
Contido em ECS Journal of Solid State Science and Technology. New Jersey. Vol. 2, no. 8 (2013), p. 3041-3044
Assunto Carbeto de silicio
Hidrogenio
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/87205
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