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Lattice strain distribution resolved by X-ray Braggsurface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticles

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Lattice strain distribution resolved by X-ray Braggsurface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticles

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Título Lattice strain distribution resolved by X-ray Braggsurface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticles
Autor Lang, Rossano
Menezes, Alan Silva de
Santos, Adenilson Oliveira dos
Reboh, Shay
Meneses, Eliermes Arraes
Amaral, Livio
Cardoso, Lisandro Pavie
Abstract Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2 nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using ω: mappings of the (111) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ionbeam- induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations and morphologies (sphere- and plate-like nanoparticles) within the implanted/recrystallized region. The results show that the shape of the synthesized material singularly affects the surrounding Si lattice. The lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers.
Contido em Journal of applied crystallography. Copenhagen. Vol. 46, no. 6 (Dec. 2013), p. 1796–1804
Assunto Cristalização
Deformação
Difracao de raios x
Nanoparticulas
Silicio
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/89722
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