Mostrar registro simples

Lift-off protocols for thin films for use in EXAFS experiments

dc.contributor.authorDecoster, S.pt_BR
dc.contributor.authorGlover, C. J.pt_BR
dc.contributor.authorJohannessen, B.pt_BR
dc.contributor.authorGiulian, Raquelpt_BR
dc.contributor.authorSprouster, David J.pt_BR
dc.contributor.authorKluth, Patrickpt_BR
dc.contributor.authorAraújo, Leandro Langiept_BR
dc.contributor.authorHussain, Zohair S.pt_BR
dc.contributor.authorSchnohr, Claudia S.pt_BR
dc.contributor.authorSalama, H.pt_BR
dc.contributor.authorKremer, Felipept_BR
dc.contributor.authorTemst, Kristiaanpt_BR
dc.contributor.authorVantomme, A.pt_BR
dc.contributor.authorRidgway, M.C.pt_BR
dc.date.accessioned2014-04-16T01:52:26Zpt_BR
dc.date.issued2013pt_BR
dc.identifier.issn0909-0495pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/94424pt_BR
dc.description.abstractLift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, standalone high-quality micrometer-thin films are obtained. Protocols for the singlecrystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semiconductors GaAs, GeSi and InP and the dielectric materials SiO2 and Si3N4 are presented. The removal of the substrate and the ability to stack the thin films yield benefits for EXAFS experiments in transmission as well as in fluorescence mode. Several cases are presented where this improved sample preparation procedure results in higher-quality EXAFS data compared with conventional sample preparation methods. This lift-off procedure can also be advantageous for other experimental techniques (e.g. small-angle X-ray scattering) that benefit from removing undesired contributions from the substrate.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of synchrotron radiation. Copenhagen. Vol. 20, no. 3 (May 2013), p. 426-432pt_BR
dc.rightsOpen Accessen
dc.subjectThin filmen
dc.subjectFilmes finos dieletricospt_BR
dc.subjectFilmes finos semicondutorespt_BR
dc.subjectLift-offen
dc.subjectSemiconductoren
dc.subjectSemicondutores amorfospt_BR
dc.subjectDielectricen
dc.subjectCrescimento de semicondutorespt_BR
dc.subjectEstrutura fina estendida de absorção de raios x (EXAFS)pt_BR
dc.subjectArseneto de galiopt_BR
dc.subjectCompostos de indiopt_BR
dc.subjectCompostos de silíciopt_BR
dc.titleLift-off protocols for thin films for use in EXAFS experimentspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000897160pt_BR
dc.type.originEstrangeiropt_BR


Thumbnail
Nome:
000897160.pdf
Tamanho:
1.076Mb
Formato:
PDF
Descrição:
Texto completo (inglês)
Visualizar/abrir
   

Este item está licenciado na Creative Commons License

Mostrar registro simples