Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)
Visualizar/abrir
Data
2014Autor
Tipo
Abstract
In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate interface region (at 300 C) and through the whole HfO2 layer (400–600 C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO2 films underwent structural changes during annealings ...
In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate interface region (at 300 C) and through the whole HfO2 layer (400–600 C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO2 films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process. ...
Contido em
Applied physics letters. New York. Vol. 104, no. 4 (Jan. 2014), p. 042901-1-042901-4
Origem
Estrangeiro
Coleções
-
Artigos de Periódicos (39074)Ciências Exatas e da Terra (5943)
Este item está licenciado na Creative Commons License