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Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)

dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorFeijó, Tais Orestespt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorAguzzoli, Cesarpt_BR
dc.contributor.authorKrug, Cristianopt_BR
dc.contributor.authorRadtke, Claudiopt_BR
dc.date.accessioned2014-04-26T01:53:21Zpt_BR
dc.date.issued2014pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/94805pt_BR
dc.description.abstractIn the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate interface region (at 300 C) and through the whole HfO2 layer (400–600 C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO2 films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 104, no. 4 (Jan. 2014), p. 042901-1-042901-4pt_BR
dc.rightsOpen Accessen
dc.subjectPropriedades fisico-quimicaspt_BR
dc.subjectÓxido de háfniopt_BR
dc.subjectHidrogêniopt_BR
dc.subjectGermâniopt_BR
dc.titleThermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000913540pt_BR
dc.type.originEstrangeiropt_BR


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