|Título||Outdiffusion of Be during rapid thermal annealing of high dose be implanted gaas
Souza, Joel Pereira de
Sadana, Devendra K.
|Abstract||The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or Si02 ) rapid thermal annealing (RTA) at 900-1000 ºC and to depend on the Be dose and its proximity to the surface. The outdiffusion is more pronounced when the Be implant is shallow (< 0.1 p,m) andlor the Be + dose is high (> 1 X 1015 cm-²). It is demonstrated that the Be outdiffusion is driven by the presence of a highly damaged surface layer. Auger results suggest the formation of a BeOx compound at the surface of a high.dose (1 X 1016 cm-²) Be-implanted sample that underwent capless RTA at 1000 ºC/1 s. It appears that BeOx formation occurs when the outdiffused Be interacts with the native Gal As oxides during annealing. AU the Be remaining in the GaAs after a > 900 ºC/2s RTA is electrically active.
|Contido em||Journal of Applied Physics. Woodbury. Vol. 67, no. 10 (May 1990), p. 6589-6591
Implantacao de ions
|Tipo||Artigo de periódico
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