Structure and composition of amorphous Ge1-xSnx thin films

dc.contributor.author	Chambouleyron, I.	pt_BR
dc.contributor.author	Souza, Joel Pereira de	pt_BR
dc.contributor.author	Baumvol, Israel Jacob Rabin	pt_BR
dc.contributor.author	Marques, F.C.	pt_BR
dc.date.accessioned	2014-05-13T02:03:41Z	pt_BR
dc.date.issued	1988	pt_BR
dc.identifier.issn	0021-8979	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/95121	pt_BR
dc.description.abstract	The composition and bonding configuration of amorphous germanium-tin (a-Gel 1--xSnx ) thin films are reported (O≤x < 0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Journal of Applied Physics. Woodbury. Vol. 63, no. 11 (June, 1988), p. 5596-5598	pt_BR
dc.rights	Open Access	en
dc.subject	Efeito mossbauer	pt_BR
dc.subject	Semicondutores amorfos	pt_BR
dc.subject	Filmes finos	pt_BR
dc.subject	Implantação de íons	pt_BR
dc.title	Structure and composition of amorphous Ge1-xSnx thin films	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000014877	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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